The fabricated device exhibitsĮxtremely high photoresponsivity (up to $3.2 imes 10^4$ A/W) which is more In a three-terminal device configuration. Hybrid phototransistor based on monolayer graphene decorated by WS$_2$-Ag NPs Lithography-free fabrication of a large area broadband superior gate-tunable By synthesizing Ag nanoparticles (Ag NPs) capped withĪ thin layer of polyvinylpyrrolidone (PVP) through chemical route, we report a Spontaneous emission in a coupled TMDC and metallic nanostructures, theįabrication of tunable broadband phototransistor with high quantum yield is Strong exciton-plasmon coupling has been demonstrated to improve absorbance and While light-matter interaction mediated by However, the low light absorption due to their small absorption cross section, Has emerged as a viable route towards realizing novel optoelectronic devices. In addition, low temperature solution-processed P(VDF-TrFE) and (C 6H 5C 2H 4NH 3) 2SnI 4 (except for the contacts of Au electrodes) in this work are considered to be suitable and compatible for flexible-based phototransistor applications in the future.Download a PDF of the paper titled Exciton-Plasmon Coupling Mediated Superior Photoresponse in 2D Hybrid Phototransistors, by Shubhrasish Mukherjee and 2 other authors Download PDF Abstract: The possibility of creating heterostructure of two-dimensional (2D) materials In addition to that, the device also demonstrated a high responsivity of 14.57 A W −1 and a high detectivity of 1.74 × 10 12 Jones under the polarization “up” state with an illumination intensity of 21 μW cm −2. Under polarization “up” and “down” states, the device achieved a high photo-switching on/off ratio (>100) and a short photoresponse time (50 ms), respectively. We observed that large hysteresis was successfully eliminated in the transfer curve, as well as the subthreshold swing being significantly reduced by one order of magnitude after P(VDF-TrFE) was introduced as a dielectric layer. In this work, ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and two-dimensional (2D) lead-free perovskite ((C 6H 5C 2H 4NH 3) 2SnI 4) were utilized as a dielectric layer and a channel layer, respectively.

The purpose of this research was to understand the effect of a built-in ferroelectric field on the performance of two-dimensional (2D) lead-free perovskite material-based phototransistor applications.

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